Spin relaxation in the presence of crossed electric and magnetic fields: A quasiclassical approach

被引：13

作者：

Bleibaum, O ^{[1
]}

机构：

[1] Otto Von Guericke Univ, Inst Theoret Phys, D-39016 Magdeburg, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.71.235318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple method for the investigation of spin relaxation phenomena in systems with Rashba and Dresselhaus spin-orbit interactions is developed. The method is applied to the investigation of the impact of external fields on the relaxation process. The calculation shows that the spin relaxation is strongly affected by a lateral electric field. The field enhances the lifetime of the magnetization and leads to an additional rotation of the magnetization. This field-induced rotation can be affected further by means of magnetic fields. We study the dependence of the field-induced rotation on the structure of the spin-orbit scattering and on the strength of the applied magnetic field.

引用

页数：6

共 31 条

[21] Rashba Hamiltonian and electron transport [J].

Molenkamp, LW ;

Schmidt, G ;

Bauer, GEW .

PHYSICAL REVIEW B, 2001, 64 (12)

[22] Drift-diffusion approach to spin-polarized transport [J].

Pershin, YV .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (1-2) :226-231

[23] Electron spin relaxation in a semiconductor quantum well [J].

Puller, VI ;

Mourokh, LG ;

Horing, NJM ;

Smirnov, AY .

PHYSICAL REVIEW B, 2003, 67 (15)

[24] A drift-diffusion model for spin-polarized transport in a two-dimensional non-degenerate electron gas controlled by spin-orbit interaction [J].

Saikin, S .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (28) :5071-5081

[25] Semiclassical Monte Carlo model for in-plane transport of spin-polarized electrons in III-V heterostructures [J].

Saikin, S ;

Shen, M ;

Cheng, MC ;

Privman, V .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1769-1775

[26] Relaxation of photoinjected spins during drift transport in GaAs [J].

Sanada, H ;

Arata, I ;

Ohno, Y ;

Chen, Z ;

Kayanuma, K ;

Oka, Y ;

Matsukura, F ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2002, 81 (15) :2788-2790

[27] Nonballistic spin-field-effect transistor [J].

Schliemann, J ;

Egues, JC ;

Loss, D .

PHYSICAL REVIEW LETTERS, 2003, 90 (14) :4

[28] Spin dephasing in n-type GaAs quantum wells in the presence of high magnetic fields in Voigt configuration [J].

Weng, AQ ;

Wu, MW .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 239 (01) :121-130

[29] Hot-electron effect in spin dephasing in n-type GaAs quantum wells -: art. no. 245320 [J].

Weng, MQ ;

Wu, MW ;

Jiang, L .

PHYSICAL REVIEW B, 2004, 69 (24) :245320-1

[30] Spintronics:: A spin-based electronics vision for the future [J].

Wolf, SA ;

Awschalom, DD ;

Buhrman, RA ;

Daughton, JM ;

von Molnár, S ;

Roukes, ML ;

Chtchelkanova, AY ;

Treger, DM .

SCIENCE, 2001, 294 (5546) :1488-1495

← 1 2 3 4 →