650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes

被引：7

作者：

Chang, SJ ^{[1
]}

Chang, CS ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 6A期

关键词：

AlGaInP; compressive strain; MQW; LED; POF;

D O I：

10.1143/JJAP.37.L653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the optical properties of the AlGaInP/GaInP light emitting diodes (LEDs), with a compressively strained multiquantum well (CSMQW) active layer, emitting at 650 nm. It was found that by introducing a compressive strain into the MQW active layer? we can significantly increase the output power of the MQW LEDs. Furthermore, we have also found that a +0.33% compressive strain can reduce the 10-90% rise time and/or fall time of the AlGaInP/GaInP MQW LEDs from 50 ns to 15 ns.

引用

页码：L653 / L655

页数：3

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