AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

被引：14

作者：

Chang, SJ ^{[1
]}

Chang, CS ^{[1
]}

Su, YK ^{[1
]}

Chang, PT ^{[1
]}

Wu, YR ^{[1
]}

Huang, KH ^{[1
]}

Chen, TP ^{[1
]}

机构：

[1] UNITED EPITAXY CO LTD,HSINCHU 300,TAIWAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 09期

关键词：

AlGaInP; LED; MQB; MQW; TSBC;

D O I：

10.1109/68.618476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AIGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multiquantum well (MQW) + TSBC AIGaInP 573-nm LED is twice as large as that of the conventional MQW AIGaInP LED emitting at the same wavelength, It was also found that the MQW + TSBC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquantum barrier (MQB) AIGaInP LED's. These results indicate that the MQW + TSBC LED is useful particularly under high-temperature operation.

引用

页码：1199 / 1201

页数：3

共 11 条

[1]

BOUR DP, 1993, QUANTUM WELL LASERS, P421

[2]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P3

[3] Chirped GaAs-AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes [J].