Growth of dilute GaNSb by plasma-assisted MBE

被引：30

作者：

Buckle, L

Bennett, BR

Jollands, S

Veal, TD

Wilson, NR

Murdin, BN

McConville, CF

Ashley, T

机构：

[1] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

doping; X-ray diffraction; molecular beam epitaxy; antimonides; semiconducting III-V materials; semiconducting gallium compounds;

D O I：

10.1016/j.jcrysgro.2004.12.148

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Using plasma-assisted molecular beam epitaxy (MBE), GaNxSb1-x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310-460° C). The films showed excellent crystalline quality and a nitrogen incorporation of 0-1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2-4 μ m range. © 2005 Elsevier B.V. All rights reserved.

引用

页码：188 / 192

页数：5

共 10 条

[1] InSb1-xNx growth and devices [J].