InGaAsSbN:: A dilute nitride compound for midinfrared optoelectronic devices

被引：33

作者：

Li, W ^{[1
]}

Héroux, JB ^{[1
]}

Wang, WI ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 07期

关键词：

D O I：

10.1063/1.1606514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of the antimony-rich dilute nitride alloys GaSbN, InGaSbN, and InGaAsSbN on GaSb substrates by solid-source molecular-beam epitaxy is reported. Bulk GaSbN layers are characterized by x-ray diffraction and the nitrogen incorporation is estimated to be close to 1%. A nitrogen-induced redshift of the photoluminescence peak wavelength as large as 110 meV is observed in In.15Ga.85Sb1-xNx/GaSb quantum wells. Photoluminescence emission at 77 K for an In0.3Ga0.7As0.1Sb0.9-xNx/Al0.25Ga0.75As0.02Sb0.98 multiple quantum well structure shows a 66 meV redshift due to nitrogen incorporation (2.33 mum emission wavelength), demonstrating the potential of this compound for midinfrared optoelectronic device applications. (C) 2003 American Institute of Physics.

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页码：4248 / 4250

页数：3

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