Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

被引：98

作者：

Harmand, JC ^{[1
]}

Ungaro, G ^{[1
]}

Largeau, L ^{[1
]}

Le Roux, G ^{[1
]}

机构：

[1] France Telecom R&D, Lab CDP, CNRS, URA250, F-92225 Bagneux, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 16期

关键词：

D O I：

10.1063/1.1318228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of nitrogen in the low percentage range is investigated in a different III-V compound matrix. The materials are grown by molecular-beam epitaxy with a nitrogen radio-frequency plasma source. For equivalent growth conditions, the same rate of N incorporation is found for GaAsN and GaInAsN. However, this N incorporation rate is significantly enhanced in the GaAsSbN alloy. These observations support a discussion on the reactive nitrogen species. (C) 2000 American Institute of Physics. [S0003- 6951(00)00242-4].

引用

页码：2482 / 2484

页数：3

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