Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers

被引：20

作者：

Smith, GM ^{[1
]}

Hughes, JS ^{[1
]}

Lammert, RM ^{[1
]}

Osowski, ML ^{[1
]}

Papen, GC ^{[1
]}

Verdeyen, JT ^{[1
]}

Coleman, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MICROELECTR LAB,URBANA,IL 61801

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.491088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector (RW-DBR) lasers are demonstrated with a spectral linewidth as low as 39 kHz for an output power of 24 mW, The fabrication requires only a single standard epitaxial growth of a laser structure while the use of a thin top cladding layer allows for a shallow reactive ion etch of the distributed Bragg reflector, These RW-DBR lasers have a threshold current of 12.4 mA, a slope of 0.3 W/A, and over 40 dB side-mode suppression at a wavelength of 1010 nm.

引用

收藏

页码：476 / 478

页数：3

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