Low subthreshold swing HfLaO/pentacene organic thin-film transistors

被引：47

作者：

Chang, M. R. ^{[1
,2
]}

Lee, P. T. ^{[1
,2
]}

McAlister, S. P. ^{[3
]}

Chin, Albert ^{[4
,5
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elecroopt Engn, Hsinchu 300, Taiwan

[3] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Nanoelectron Consortium Taiwan, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 03期

关键词：

HfLaO; high-kappa; organic thin-film transistors (OTFTs); subthreshold swing (SS);

D O I：

10.1109/LED.2007.915381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have integrated a high-kappa HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of - 1.3 V, and a field-effect mobility of 0.71 cm(2)/V.s. This occurred along with an ON-OFF state drive current ratio of 1.0 x 10(5), when the devices were operated at only 2 V. The performance is due to the high gate-capacitance density of 950 nF/cm(2) that is given by the HftaO dielectric, which is achieved at an equivalent oxide thickness of only 3.6 nm with a low leakage current of 5.1 x 10(-7) A/cm(2) at 2 V.

引用

页码：215 / 217

页数：3

共 17 条

[1] Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric [J].

Chang, KM ;

Yang, WC ;

Tsai, CP .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (08) :512-514

[2] Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode [J].

Cheng, C. H. ;

Pan, H. C. ;

Yang, H. J. ;

Hsiao, C. N. ;

Chou, C. P. ;

McAlister, S. P. ;

Chin, Albert .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1095-1097

[3] High-performance SrTiO3 MIM capacitors for analog applications [J].

Chiang, K. C. ;

Huang, Ching-Chien ;

Chen, G. L. ;

Chen, Wen Jauh ;

Kao, H. L. ;

Wu, Yung-Hsien ;

Chin, Albert ;

McAlister, Sean P. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2312-2319

[4]

CHIANG KC, 2006, VLSI S, P126

[5]

Choi YW, 1999, IEEE ELECTR DEVICE L, V20, P2, DOI 10.1109/55.737555

[6] PERFORMANCE OF THIN-FILM TRANSISTORS ON POLYSILICON FILMS GROWN BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION AT VARIOUS PRESSURES [J].

DIMITRIADIS, CA ;

COXON, PA ;

DOZSA, L ;

PAPADIMITRIOU, L ;

ECONOMOU, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :598-606

[7] High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric [J].

Hung, BF ;

Chiang, KC ;

Huang, CC ;

Chin, A ;

McAlister, SP .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (06) :384-386

[8] High-resolution full-color LCD driven by OTFTs using novel passivation film [J].

Kawasaki, M ;

Imazeki, S ;

Ando, M ;

Sekiguchi, Y ;

Hirota, S ;

Uemura, S ;

Kamata, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (03) :435-441

[9] Pentacene organic thin-film transistors for circuit and display applications [J].

Klauk, H ;

Gundlach, DJ ;

Nichols, JA ;

Jackson, TN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) :1258-1263

[10]

Lin C. W., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P305, DOI 10.1109/IEDM.1999.824157

← 1 2 →