High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric

被引：47

作者：

Hung, BF ^{[1
]}

Chiang, KC

Huang, CC

Chin, A

McAlister, SP

机构：

[1] Natl Chiao Tung Univ, Nano Sci Technol Sci, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[3] Natl Res Council Canada, Ottawa, ON, Canada

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 06期

关键词：

high-kappa; LaAlO3; thin-film transistors (TFTs); threshold voltage;

D O I：

10.1109/LED.2005.848622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have integrated a high-kappa, LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-kappa dielectric.

引用

页码：384 / 386

页数：3

共 19 条

[1] High-performance RSD poly-Si TFTs with a new ONO gate dielectric [J].

Chang, KM ;

Yang, WC ;

Hung, BF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :995-1001

[2] Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric [J].

Chang, KM ;

Yang, WC ;

Tsai, CP .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (08) :512-514

[3] High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10Å [J].

Chin, A ;

Wu, YH ;

Chen, SB ;

Liao, CC ;

Chen, WJ .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :16-17

[4] A study on development of a die design system for diecasting [J].

Choi, JC ;

Kwon, TH ;

Park, JH ;

Kim, JH ;

Kim, CH .

INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2002, 20 (01) :1-8

[5] PERFORMANCE OF THIN-FILM TRANSISTORS ON POLYSILICON FILMS GROWN BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION AT VARIOUS PRESSURES [J].

DIMITRIADIS, CA ;

COXON, PA ;

DOZSA, L ;

PAPADIMITRIOU, L ;

ECONOMOU, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :598-606

[6] High-performance thin-film transistors fabricated using excimer laser processing and grain engineering [J].

Giust, GK ;

Sigmon, TW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :925-932

[7]

Huang C. H., 2003, S VLSI, P119

[8] A new poly-Si TFT with selectively doped channel fabricated by novel excimer laser annealing [J].

Jeon, JH ;

Lee, MC ;

Park, KC ;

Jung, SH ;

Han, MK .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :213-216

[9] High-performance polycrystalline SiGe thin-film transistors using Al2O3 gate insulators [J].

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (12) :502-504

[10] Surface treatment effect on the poly-Si TFTs fabricated by electric field enhanced crystallization of Ni/a-Si:H films [J].

Kim, B ;

Kim, HY ;

Seo, HS ;

Kim, SK ;

Kim, CD .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (12) :733-735

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