Carbon nanotube nanocontact in T-junction structures

被引:13
作者
Chiu, Po-Wen [1 ]
Roth, Siegmar
机构
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan
[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
关键词
D O I
10.1063/1.2780076
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report transport measurements on naturally formed carbon nanotube T junctions with a semiconducting bar and a metallic stem. The T junctions provide a unique structure that allows them to compare the quasi-zero-dimensional (Q0D) contact formed at the junction node with the quasi-one-dimensional (Q1D) contact formed between the semiconducting bar and the lithographically defined gold. From the bias-induced barrier lowering, it shows that the Q1D contact behaves like an end-bonded contact which has extended depletion tail along the tube axis, while the Q0D case acts as a side contact which has constrained depletion perpendicular to the tube axis. (C) 2007 American Institute of Physics.
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页数:3
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