Influence of H2O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

被引：66

作者：

Chung, Wan-Fang ^{[1
,2
]}

Chang, Ting-Chang ^{[6
,7
]}

Li, Hung-Wei ^{[3
,4
]}

Chen, Chi-Wen ^{[6
]}

Chen, Yu-Chun ^{[6
]}

Chen, Shih-Ching ^{[6
]}

Tseng, Tseung-Yuen ^{[1
,2
]}

Tai, Ya-Hsiang ^{[3
,5
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[5] Natl Chiao Tung Univ, Display Inst, Hsinchu, Taiwan

[6] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

[7] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 03期

关键词：

HUMIDITY-DETECTION; CHANNEL LAYER; TEMPERATURE; MECHANISM; SURFACE; WATER;

D O I：

10.1149/1.3526097

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. As humidity increased from 0 to 80%, the mobility increased from 0.22 to 0.24 cm(2)/(V s), threshold voltage decreased from 6.6 to 4.4 V, and subthreshold swing changed from 0.77 to 1.27 V/dec. The conflicting phenomenon among the three parameters was suggested to be due to a division of the gate voltage by the water molecules which adsorbed on the thin film transistor back-channel and acted as dipoles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3526097] All rights reserved.

引用

页码：H114 / H116

页数：3

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