A silicon crystalline resistor with an adsorbing porous layer as gas sensor

被引：32

作者：

Barillaro, G ^{[1
]}

Diligenti, A ^{[1
]}

Marola, G ^{[1
]}

Strambini, LM ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, I-56126 Pisa, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2005年 / 105卷 / 02期

关键词：

gas sensor; porous silicon; organic vapors; integrated devices;

D O I：

10.1016/j.snb.2004.06.010

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, anew integrated sensing device, that is a crystalline silicon resistor provided with an adsorbing porous silicon layer on its top, is proposed. The sensing mechanism is based on a gas-induced modulation effect of the resistor cross-section due to the adsorbed molecules in the porous film. The sensitivity of the device can be tuned by properly changing the polarization of a gate electrode. The working principle, the fabrication process and the electrical characterization of the device in presence of isopropanol vapors are presented and discussed. (c) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：278 / 282

页数：5

相关论文

共 17 条

[1] Front-side micromachined porous silicon nitrogen dioxide gas sensor [J].

Baratto, C ;

Faglia, G ;

Sberveglieri, G ;

Boarino, L ;

Rossi, AM ;

Amato, G .

THIN SOLID FILMS, 2001, 391 (02) :261-264

[2] Gas detection with a porous silicon based sensor [J].

Baratto, C ;

Comini, E ;

Faglia, G ;

Sberveglieri, G ;

Di Francia, G ;

De Filippo, F ;

La Ferrara, V ;

Quercia, L ;

Lancellotti, L .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 65 (1-3) :257-259

[3] Temperature behavior of the APSFET - a porous silicon-based FET gas sensor [J].

Barillaro, G ;

Nannini, A ;

Pieri, F ;

Strambini, LM .

SENSORS AND ACTUATORS B-CHEMICAL, 2004, 100 (1-2) :185-189

[4] APSFET: a new, porous silicon-based gas sensing device [J].

Barillaro, G ;

Nannini, A ;

Pieri, F .

SENSORS AND ACTUATORS B-CHEMICAL, 2003, 93 (1-3) :263-270

[5]

COX PF, 1974, Patent No. 3831432

[6] Role of parasitics in humidity sensing by porous silicon [J].

Das, J ;

Hossain, SM ;

Chakraborty, S ;

Saha, H .

SENSORS AND ACTUATORS A-PHYSICAL, 2001, 94 (1-2) :44-52

[7] Porous silicon-based humidity sensor with interdigital electrodes and internal heaters [J].

Fürjes, P ;

Kovács, A ;

Dücso, C ;

Adám, M ;

Müller, B ;

Mescheder, U .

SENSORS AND ACTUATORS B-CHEMICAL, 2003, 95 (1-3) :140-144

[8] Determination of sensoric parameters of porous silicon in sensing of organic vapors [J].

Holec, T ;

Chvojka, T ;

Jelínek, I ;

Jindrich, J ;

Nemec, I ;

Pelant, I ;

Valenta, J ;

Dian, J .

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2) :251-254

[9] Organic vapour sensing by current response of porous silicon layer [J].

Kim, SJ ;

Lee, SH ;

Lee, CJ .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (24) :3505-3509

[10] Integration of porous silicon chips in an electronic artificial nose [J].

Létant, SE ;

Content, S ;

Tan, TT ;

Zenhausern, F ;

Sailor, MJ .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 69 (1-2) :193-198