Are diamonds a MEMS' best friend?

被引:63
作者
Auciello, Orlando [1 ,2 ]
Pacheco, Sergio
Sumant, Anirudha V. [1 ,2 ]
Gudeman, Chris
Sampath, Suresh
Datta, Arindom
Carpick, Robert W. [3 ]
Adiga, Vivekananda P. [4 ]
Zurcher, Peter
Ma, Zhenqiang [5 ]
Yuan, Hao-Chih [5 ]
Carlisle, John A.
Kabius, Bernd [6 ]
Hiller, Jon [6 ]
Srinivasan, Sudarsan [1 ]
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[3] Univ Penn, Dept Mech Engn & Appl Mech, Philadelphia, PA 19104 USA
[4] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[5] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[6] Argonne Natl Lab, Ctr Electron Microscopy, Argonne, IL 60439 USA
关键词
D O I
10.1109/MMM.2007.907816
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
RF microelectromechanical/nanoelectromechanical devices (RF MEMS/NEMS) such as resonators and switches have been proved attractive for the next-generation military and communication systems. Most NEMS/MEMS devices are based on silicon because of the available surface-machining technology adapted from silicon based microelectronics batch fabrication technology. Diamonds provide properties that would potentially enhance the performance of the switches that include tribological and mechanical properties, as well as the low-trap characteristics and capability to tailor the conductivity of diamond films. The fabrication of the diamond-based RF MEMS/NEMS devices require the growth of smooth diamond films with uniform thickness, nanostructure, and properties over large area substrates. Thin-film deposition methods based on microwave plasma enhanced chemical vapor deposition (MPCVD) with hydrogen rich chemistry produce microcrystalline diamond films.
引用
收藏
页码:61 / 75
页数:15
相关论文
共 43 条
[11]   INSITU FRICTION AND WEAR MEASUREMENTS IN INTEGRATED POLYSILICON MECHANISMS [J].
GABRIEL, KJ ;
BEHI, F ;
MAHADEVAN, R ;
MEHREGANY, M .
SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) :184-188
[12]   Electrical contacts to ultrananocrystalline diamond [J].
Gerbi, JE ;
Auciello, O ;
Birrell, J ;
Gruen, DM ;
Alphenaar, BW ;
Carlisle, JA .
APPLIED PHYSICS LETTERS, 2003, 83 (10) :2001-2003
[13]   FULLERENES AS PRECURSORS FOR DIAMOND FILM GROWTH WITHOUT HYDROGEN OR OXYGEN ADDITIONS [J].
GRUEN, DM ;
LIU, SZ ;
KRAUSS, AR ;
LUO, JS ;
PAN, XZ .
APPLIED PHYSICS LETTERS, 1994, 64 (12) :1502-1504
[14]   Characterization of nanocrystalline diamond films by core-level photoabsorption [J].
Gruen, DM ;
Krauss, AR ;
Zuiker, CD ;
Csencsits, R ;
Terminello, LJ ;
Carlisle, JA ;
Jimenez, I ;
Sutherland, DGJ ;
Shuh, DK ;
Tong, W ;
Himpsel, FJ .
APPLIED PHYSICS LETTERS, 1996, 68 (12) :1640-1642
[15]   Microstructure of ultrananocrystalline diamond films grown by microwave Ar-CH4 plasma chemical vapor deposition with or without added H2 [J].
Jiao, S ;
Sumant, A ;
Kirk, MA ;
Gruen, DM ;
Krauss, AR ;
Auciello, O .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :118-122
[16]   An adhesion map for the contact of elastic spheres [J].
Johnson, KL ;
Greenwood, JA .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1997, 192 (02) :326-333
[17]  
Knacke O., 1991, Thermochemical Properties of Inorganic Substances, V2nd
[18]   Diamond MEMS - a new emerging technology [J].
Kohn, E ;
Gluche, P ;
Adamschik, M .
DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) :934-940
[19]   Electron field emission for ultrananocrystalline diamond films [J].
Krauss, AR ;
Auciello, O ;
Ding, MQ ;
Gruen, DM ;
Huang, Y ;
Zhirnov, VV ;
Givargizov, EI ;
Breskin, A ;
Chechen, R ;
Shefer, E ;
Konov, V ;
Pimenov, S ;
Karabutov, A ;
Rakhimov, A ;
Suetin, N .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2958-2967
[20]  
LEE AP, 1992, MATER RES SOC SYMP P, V276, P67, DOI 10.1557/PROC-276-67