Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

被引：73

作者：

Brennan, B. ^{[1
,2
]}

Milojevic, M. ^{[3
]}

Hinkle, C. L. ^{[3
]}

Aguirre-Tostado, F. S. ^{[3
]}

Hughes, G. ^{[1
,2
]}

Wallace, R. M. ^{[3
]}

机构：

[1] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland

[2] Dublin City Univ, Natl Ctr Sensor Res, Dublin 9, Ireland

[3] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 09期

基金：

美国国家科学基金会;

关键词：

InGaAs; Sulphur passivation; Photoemission; Surface roughness; Native oxide; Ammonium sulphide; Chemical passivation; SYNCHROTRON-RADIATION PHOTOEMISSION; RAY PHOTOELECTRON-SPECTROSCOPY; GAAS(100) SURFACE; ELECTRONIC-PROPERTIES; GALLIUM-ARSENIDE; INGAAS SURFACES; GAAS; 001; IN-SITU; PERFORMANCE; DIELECTRICS;

D O I：

10.1016/j.apsusc.2010.11.179

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The passivation of III-V semiconductor materials with sulphur is widely reported to reduce interface state defects and improve semiconductor device performance. The most common approach utilises ammonium sulphide ((NH4)(2)S), however there are wide variations in the reported processing parameters involved in this procedure. This study provides a comprehensive review of the various parameters used as well as determining the optimal processing conditions in terms of sample pre-treatments, temperature of the (NH4)(2)S solution, length of time the sample is in the solution and (NH4)(2)S concentration, by measuring the level of residual native oxides and surface roughness by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：4082 / 4090

页数：9

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