Wet chemical treatment in hydrazine-sulfide solutions for sulfide and nitride monomolecular surface films on GaAs(100)

被引：8

作者：

Berkovits, VL

Ulin, VP

Losurdo, M

Capezzuto, P

Bruno, G

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] CNR, Ist Metodol Inorgan & Plasmi, I-70126 Bari, Italy

[3] INSTM, I-70126 Bari, Italy

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 05期

关键词：

D O I：

10.1149/1.1878032

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

GaAs surface chemical passivation by wet chemical treatments in hydrazine-sulfide solutions with different pH values has been studied by X-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that highly alkaline (pH 12) solutions result in a coherent monomolecular film of gallium nitride, while treatment in buffered solutions (pH < 8) yields a surface layer of gallium sulfide. Both nitride and sulfide surface films are found to be stable against oxidation in air ambient over months, attesting to the validity of the wet chemical treatment in hydrazine sulfide solutions for chemical passivation of the GaAs(100) surface. The chemical mechanism for formation of the surface nitride and sulfide films is presented and discussed. (c) 2005 The Electrochemical Society.

引用

收藏

页码：G349 / G353

页数：5

相关论文

共 18 条

[1] Wet chemical nitridation of GaAs (100) by hydrazine solution for surface passivation [J].

Berkovits, VL ;

Ulin, VP ;

Losurdo, M ;

Capezzuto, P ;

Bruno, G ;

Perna, G ;

Capozzi, V .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3739-3741

[2] Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces [J].

Berkovits, VL ;

Gordeeva, AB ;

Kosobukin, VA .

SOLID STATE COMMUNICATIONS, 2001, 119 (12) :647-651

[3] LIQUID-PHASE EPITAXIAL REGROWTH ON SULFIDE-PASSIVATED GA1-XALXAS [J].

BERKOVITS, VL ;

LANTRATOV, VM ;

LVOVA, TV ;

SHAKIASHVILI, GA ;

ULIN, VP .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :970-972

[4] Chemical nitridation of GaAs(100) by hydrazine-sulfide water solutions [J].

Berkovits, VL ;

L'vova, TV ;

Ulin, VP .

VACUUM, 2000, 57 (02) :201-207

[5] Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysis [J].

Berkovits, VL ;

Ulin, VP ;

Paget, D ;

Bonnet, JE ;

L'vova, TV ;

Chiaradia, P ;

Lantratov, VM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04) :2528-2538

[6] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].

Bruggeman, DAG .

ANNALEN DER PHYSIK, 1935, 24 (07) :636-664

[7] Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry [J].

Edwards, NV ;

Bremser, MD ;

Weeks, TW ;

Kern, RS ;

Davis, RF ;

Aspnes, DE .

APPLIED PHYSICS LETTERS, 1996, 69 (14) :2065-2067

[8] Effect of prepared GaAs surface on the sulfidation with (NH4)2Sx solution [J].

Kang, MG ;

Park, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (01) :88-92

[9] Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates [J].

L'vova, TV ;

Sedova, IV ;

Ulin, VP ;

Sorokin, SV ;

Solov'ev, VA ;

Sitnikova, AA ;

Berkovits, VL ;

Ivanov, SV .

VACUUM, 2000, 57 (02) :163-169

[10] OXIDATION OF SULFUR-TREATED GAAS-SURFACES STUDIED BY PHOTOLUMINESCENCE AND PHOTOELECTRON-SPECTROSCOPY [J].

OSHIMA, M ;

SCIMECA, T ;

WATANABE, Y ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B) :518-522