Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces

被引：8

作者：

Berkovits, VL ^{[1
]}

Gordeeva, AB ^{[1
]}

Kosobukin, VA ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 119卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

semiconductors; surfaces and interfaces; crystal structure and symmetry; optical properties;

D O I：

10.1016/S0038-1098(01)00310-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Oxidized (001) surfaces of both GaAs crystals and Ga0.7Al0.3As alloys are found to exhibit characteristic reflectance anisotropy (RA) spectra in the range 1.5-5.5 eV. A microstructure model of GaAs/oxide interface is proposed to treat the observed spectra within a quasi-microscopic theory of reflectance anisotropy developed for multilayer dielectric arrangements. Quantitative agreement between measured and calculated RA spectra shows the principal spectral features to be related to local-field effects at the GaAs/oxide interface, which is typical of A(3)B(5) compounds. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：647 / 651

页数：5

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