Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

被引：57

作者：

Edwards, NV ^{[1
]}

Bremser, MD ^{[1
]}

Weeks, TW ^{[1
]}

Kern, RS ^{[1
]}

Davis, RF ^{[1
]}

Aspnes, DE ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic ellipsometry was used to assess the preparation of smooth and abrupt GaN, AlN, and AlGaN surfaces by wet chemical treatments in real time. About 20-50 Angstrom of overlayer typically can be removed from air-exposed samples. (C) 1996 American Institute of Physics.

引用

页码：2065 / 2067

页数：3

共 14 条

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