Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

被引：7

作者：

Wei, YQ ^{[1
]}

Wang, SM

Wang, XD

Zhao, QX

Sadeghi, M

Tångring, I

Larsson, A

机构：

[1] Chalmers Univ Technol, Dept Microelect & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Dept Phys Phys Elect & Photon, SE-41296 Gothenburg, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

low dimensional structures; nanostructures; molecular beam epitaxy; semiconducting III-V materials; laser diodes;

D O I：

10.1016/j.jcrysgro.2004.12.094

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have systematically studied the growth of highly strained InGaAs quantum wells (QWs) at low growth temperatures by molecular beam epitaxy (MBE). Photoluminescence (PL) measurements show that the emission wavelength increases gradually when increasing the In content from 24% up to 42% while the PL intensity dramatically drops when the In content is above 39 %. Luminescence at 1.245 mu m is achieved from a 7 nm thick In0.42Ga0.58As QW with a linewidth of only 17.7meV. Lasing at 1.182 and 1.215 mu m occurs from an In0.36Ga0.64As QW and an In0.39Ga0.61 As QW laser, respectively. In the first case, a high characteristic temperature, T-0 of 213 K between 20 and 60 degrees C and that of 136 K between 60 and 70 degrees C are obtained. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：747 / 750

页数：4

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