Doping, compensation, and photosensitivity of detector grade CdTe

被引：8

作者：

Babentsov, V. ^{[2
]}

Franc, J. ^{[1
]}

Fauler, A. ^{[3
]}

Fiederle, M. ^{[3
]}

James, R. B. ^{[4
]}

机构：

[1] Charles Univ Prague, Inst Phys, Fac Math & Phys, CZ-12116 Prague, Czech Republic

[2] Inst Semicond Phys, UA-03028 Kiev, Ukraine

[3] Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

[4] Brookhaven Natl Lab, Nonproliferat & Natl Secur Directorate, Upton, NY 11973 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2008年 / 23卷 / 06期

关键词：

D O I：

10.1557/JMR.2008.0198

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the resistivity, photosensitivity, photoluminescence, and surface photovoltage of CdTe crystals doped with Ge or Sri to extend our knowledge of the influence of the deep-donor level on compensation and afterglow effects. We demonstrated a strong correlation between photosensitivity caused by photoelectrons with Fermi-level variations near the Ge-Cd(0/2+) or Sn-Cd(0/2+) energy levels. Surface photovoltage measurements confirmed that when the concentration of residual acceptors varied along the direction of growth, then trapping conditions dramatically changed as a defect was converted from a neutral state to doubly charged positive one.

引用

页码：1751 / 1757

页数：7

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