Effects of a TiO2 Buffer Layer on Solution-Deposited VO2 Films: Enhanced Oxidization Durability

被引：57

作者：

Zhang, Zongtao ^{[1
,2
]}

Gao, Yanfeng ^{[1
]}

Kang, Litao ^{[1
,2
]}

Du, Jing ^{[1
,2
]}

Luo, Hongjie ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 50期

基金：

中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; INTELLIGENT WINDOW COATINGS; METAL-INSULATOR-TRANSITION; OPTICAL-PROPERTIES; THIN-FILMS; VANADIUM DIOXIDE; PHASE-TRANSFORMATION; MULTIFUNCTIONAL WINDOW; RAMAN MICROSCOPY; OXIDES;

D O I：

10.1021/jp108449m

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this article, thermochromic VO2 films were deposited on fused quartz and rutile TiO2-buffered fused quartz substrates via a solution-phase process. The incorporation of a TiO2 buffer layer endures an enhanced oxidization durability of VO2 films under an environment with high oxygen partial pressures. Oxidization in furnace during a cooling stage and rapid thermal oxidization (RTO) treatments were employed to investigate the evolution of microstructures and compositions of the films in the gradual oxidization processes. Oxidization treatments transformed VO2 into V2O5 for films grown on fused quartz substrates, whereas the oxidation process was significantly hindered for films prepared on a TiO2 buffer layer, especially around the VO2/TiO2 interface. The phenomenon is first reported in this article and is important for practical applications.

引用

页码：22214 / 22220

页数：7

共 50 条

[1] Effect of synthesis conditions on the metal-semiconductor phase transition in vanadium dioxide thin films [J].

Aliev, RA ;

Klimov, VA .

PHYSICS OF THE SOLID STATE, 2004, 46 (03) :532-536

[2] ELECTROCHEMICAL SYNTHESIS AND INSITU RAMAN-SPECTROSCOPY OF THIN-FILMS OF TITANIUM-DIOXIDE [J].

ARSOV, LD ;

KORMANN, C ;

PLIETH, W .

JOURNAL OF RAMAN SPECTROSCOPY, 1991, 22 (10) :573-575

[3] INFRARED OPTICAL PROPERTIES OF VANADIUM DIOXIDE ABOVE AND BELOW TRANSITION TEMPERATURE [J].

BARKER, AS ;

VERLEUR, HW ;

GUGGENHEIM, HJ .

PHYSICAL REVIEW LETTERS, 1966, 17 (26) :1286-+

[4] Optical switching in VO2 thin films [J].

Béteille, F ;

Livage, J .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1998, 13 (1-3) :915-921

[5] Controlling oxidation states in uranium oxides through epitaxial stabilization [J].

Burrell, Anthony K. ;

McCleskey, Thomas M. ;

Shukla, Piyush ;

Wang, Haiyan ;

Durakiewicz, Tomasz ;

Moore, David P. ;

Olson, Clifford G. ;

Joyce, John J. ;

Jia, Quanxi .

ADVANCED MATERIALS, 2007, 19 (21) :3559-+

[6] OPTICAL-PROPERTIES OF VANADIUM DIOXIDE AND VANADIUM PENTOXIDE THIN-FILMS [J].

CHAIN, EE .

APPLIED OPTICS, 1991, 30 (19) :2782-2787

[7] Nanostructured vanadium dioxide thin films with low phase transition temperature [J].

Chen, Sihai ;

Ma, Hong ;

Dai, Jun ;

Yi, Xinjian .

APPLIED PHYSICS LETTERS, 2007, 90 (10)

[8] Confocal Raman Microscopy across the Metal-Insulator Transition of Single Vanadium Dioxide Nanoparticles [J].

Donev, Eugenii U. ;

Lopez, Rene ;

Feldman, Leonard C. ;

Haglund, Richard F., Jr. .

NANO LETTERS, 2009, 9 (02) :702-706

[9]

Eyert V, 2002, ANN PHYS-BERLIN, V11, P650, DOI 10.1002/1521-3889(200210)11:9<650::AID-ANDP650>3.0.CO

[10]

2-K

← 1 2 3 4 5 →