High efficiency low temperature grown Cu(In,Ga)Se2 thin film solar cells on flexible substrates using NaF precursor layers

被引：58

作者：

Caballero, Raquel ^{[1
]}

Kaufmann, Christian A. ^{[1
]}

Eisenbarth, Tobias ^{[1
]}

Unold, Thomas ^{[1
]}

Klenk, Reiner ^{[1
]}

Schock, Hans-Werner ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

来源：

PROGRESS IN PHOTOVOLTAICS | 2011年 / 19卷 / 05期

关键词：

CIGSe; thin film solar cells; low growth temperature; polyimide; STRUCTURAL-PROPERTIES;

D O I：

10.1002/pip.1064

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report a total-area efficiency of 15.9% for flexible Cu(In,Ga)Se-2 thin film solar cells on polyimide foil (cell area 0.95 cm(2)). The absorber layer was grown by a multi-stage deposition process at a maximum nominal process temperature of 420 degrees C. The Na was added via evaporation of a NaF layer prior to the absorber deposition leading to an enhanced V-oc and FF. Growth conditions and device characterization are described. Copyright (C) 2011 John Wiley & Sons, Ltd.

引用

页码：547 / 551

页数：5

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