Observation of photoluminescence from Al1-xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy

被引：32

作者：

Yamaguchi, S ^{[1
]}

Kariya, M ^{[1
]}

Nitta, S ^{[1
]}

Takeuchi, T ^{[1
]}

Wetzel, C ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.122015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed photoluminescence of Al1-xInxN films. The films were grown on GaN by atmospheric pressure metalorganic vapor phase epitaxy. GaV was grown on a c-plane sapphire substrate with a low-temperature deposited ALN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown that each spectral peak shifts with alloy composition x and that Al1-xInxN heteroepitaxial films are not macroscopically in phase separation and are constituted in the wurzite structure. (C) 1998 American Institute of Physics.

引用

页码：830 / 831

页数：2

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