Excitonic Properties and Near-Infrared Coherent Random Lasing in Vertically Aligned CdSe Nanowires

被引：76

作者：

Chen, Rui ^{[1
]}

Utama, Muhammad Iqbal Bakti ^{[1
]}

Peng, Zeping ^{[1
]}

Peng, Bo ^{[1
]}

Xiong, Qihua ^{[1
,2
]}

Sun, Handong ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Div Microelect, Singapore 639798, Singapore

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

TEMPERATURE-DEPENDENCE; ROOM-TEMPERATURE; PHONON INTERACTIONS; OPTICAL-PROPERTIES; ZNS NANOWIRES; QUANTUM DOTS; THIN-FILM; EMISSION; LASERS; PHOTOLUMINESCENCE;

D O I：

10.1002/adma.201003820

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-quality, vertically aligned CdSe nanowires are prepared by the vapor transport growth technique. Strong free-exciton absorption and emission are observed and, under optical excitation, near-infrared coherent random lasing is demonstrated for the first time from CdSe nanowires at room temperature. The results show that this material system holds promise for optoelectronic applications.

引用

页码：1404 / 1408

页数：5

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