Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

被引：67

作者：

Matsuo, K ^{[1
]}

Negoro, N

Kotani, J

Hashizume, T

Hasegawa, H

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 244卷 / 1-4期

关键词：

GaN; AlGaN; Pt; Schottky; gas sensor;

D O I：

10.1016/j.apsusc.2004.10.149

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Exposure of Pt/GaN and Pt/AlGaN/GaN Schottky diodes to H-2 gas at moderately high temperatures around 100 degrees C resulted in marked increase of forward and reverse currents. Increase was much larger in the Pt/AlGaN/GaN diode than in the Pt/GaN diode. Rapid turn-on responses and somewhat slower turn-off responses were observed with reproducible response magnitudes. A rigorous computer simulation of I-V curves indicated that current changes are due to changes in the Schottky barrier height caused either by H-induced formation of interfacial dipole or by hydrogen passivation of interface states. (c) 2005 Published by Elsevier B.V.

引用

页码：273 / 276

页数：4

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