A sound barrier for silicon?

被引:35
作者
Muller, DA [1 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
关键词
D O I
10.1038/nmat1466
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Microprocessor manufacturers have undergone a major shift from switching the speed of a single processor to increasing the number of processors that can work in parallel. A simple approach to scaling is just to shrink all the linear physical dimensions of each field-effect transistors by the same factor without disturbing the supply voltage. The mobility in the channel could be enhanced by using Silicon and Germanium alloys straining the channel, or even using different wafer orientations. Marketing campaigns have de-emphasized clockspeed and stressed power management and less tangible features including compatibility and reliability.
引用
收藏
页码:645 / 647
页数:3
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