Optical investigation of Si nano-crystals in amorphous silicon matrix

被引：11

作者：

Hernandez, AV

Torchynska, TV

Matsumoto, Y

Sandoval, SJ

Dybiec, M

Ostapenko, S

Shcherbina, LV

机构：

[1] UPALM, ESFM, Natl Polytech Inst, Mexico City 07738, DF, Mexico

[2] CINVESTAV, IPN, Queretaro, Mexico

[3] Univ S Florida, Tampa, FL 33620 USA

[4] Natl Acad Sci Ukraine, Inst Semicond Phys, Kiev, Ukraine

来源：

MICROELECTRONICS JOURNAL | 2005年 / 36卷 / 3-6期

关键词：

Si QD luminescence; band tail luminescence; amorphous Si;

D O I：

10.1016/j.mejo.2005.02.065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36 eV have been revealed in studied samples. The 0.90-0.98 eV PL bands are attributed to the band tail luminescence in Si nano crystallites with the size of 15-20 nm. Concurrently, the 1.18 and 1.36 eV PL bands are connected, apparently, with radiative transition between quantum confined levels within Si QDs (size of 5-6 nm) embedded into a-Si matrix. (c) 2005 Elsevier Ltd. All rights reserved.

引用

收藏

页码：510 / 513

页数：4

相关论文

共 16 条

[1] The structural and luminescence properties of porous silicon [J].

Cullis, AG ;

Canham, LT ;

Calcott, PDJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965

[2] Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD [J].

Feng, Y ;

Zhu, M ;

Liu, F ;

Liu, J ;

Han, H ;

Han, Y .

THIN SOLID FILMS, 2001, 395 (1-2) :213-216

[3] MICROSTRUCTURE AND OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS - SIZE DEPENDENCE OF ABSORPTION-SPECTRA IN SI NANOMETER-SIZED CRYSTALLITES [J].

KANEMITSU, Y ;

UTO, H ;

MASUMOTO, Y ;

MATSUMOTO, T ;

FUTAGI, T ;

MIMURA, H .

PHYSICAL REVIEW B, 1993, 48 (04) :2827-2830

[4] Nature of visible luminescence and its excitation in Si-SiOx systems [J].

Khomenkova, L ;

Korsunska, N ;

Yukhimchuk, V ;

Jumayev, B ;

Torchynska, T ;

Hernandez, AV ;

Many, A ;

Goldstein, Y ;

Savir, E ;

Jedrzejewski, J .

JOURNAL OF LUMINESCENCE, 2003, 102 :705-711

[5] Defect-related luminescence of Si/SiO2 layers [J].

Khomenkova, L ;

Korsunska, N ;

Torchynska, T ;

Yukhimchuk, V ;

Jumayev, B ;

Many, A ;

Goldstein, Y ;

Savir, E ;

Jedrzejewski, J .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) :13217-13221

[6]

Korsunskaya NE, 1996, SEMICONDUCTORS+, V30, P792

[7] Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer [J].

Lan, AD ;

Liu, BX ;

Bai, XD .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5144-5147

[8] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].

LEHMANN, V ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858

[9] Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2 [J].

Linnros, J ;

Lalic, N ;

Galeckas, A ;

Grivickas, V .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6128-6134

[10] Effects of contact metals on electroluminescence from embedded nanosize-Si-particle films [J].

Qin, GG ;

Li, AP ;

Zhang, YX .

PHYSICAL REVIEW B, 1996, 54 (16) :11122-11125