Reversible in situ modulation of competing phases in manganite/ferroelectrics heterostructures

被引：13

作者：

Chen, L. P. ^{[1
]}

Gao, J. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

EPL | 2011年 / 93卷 / 04期

关键词：

EPITAXIAL THIN-FILMS; STRAIN; MAGNETORESISTANCE; LA1-XCAXMNO3; RESISTIVITY; MANGANITES; SEPARATION; STATE;

D O I：

10.1209/0295-5075/93/47009

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Manganite/ferroelectrics heterostructures were formed by growing a La(0.8)Ca(0.2)MnO(3) film on single crystal of ferroelectric 0.72Pb(Mg(1/3)Nb(2/3))O(3)-0.28PbTiO(3) (PMN-PT). In such heterostructures, the lattice strain can be well controlled by the electric field applied to PMN-PT. Thus the properties of the La0.8Ca0.2MnO3 layer become tunable. Significant modulations on both insulator-metal (I-M) phase transition and resistivity (similar to 15%) were achieved under a field of 8 kV/cm. The compression of the manganite lattice in the (a, b)-plane resulted in a lower resistance and higher I-M transition temperature, demonstrating an enhanced ferromagnetic-metallic phase. Such a modulation of competing phases was ascribed to the distortion of the MnO(6) octahedron. Copyright (C) EPLA, 2011

引用

页数：5

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