Epitaxial growth of II-VI compound semiconductors by atomic layer epitaxy

被引：40

作者：

Hsu, CT ^{[1
]}

机构：

[1] Natl Huwei Inst Technol, Dept Elect Engn, Huwei, Yun Lin, Taiwan

来源：

THIN SOLID FILMS | 1998年 / 335卷 / 1-2期

关键词：

atomic layer epitaxy (ALE); ZnS; ZnSe; ZnSe/ZnS strained-layer superlattice; ZnSxSe1-x;

D O I：

10.1016/S0040-6090(98)00950-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The U-VI compound semiconductors are widely used for a wide variety of optoelectronic devices. This paper will discuss the growth of ZnS, ZnSe, ZnSe/ZnS strained-layer superlattice and ZnSxSe1-x materials on Si substrates by atomic layer epitaxy (ALE) using metalorganic chemical vapor deposition. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：284 / 291

页数：8

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