CHARACTERIZATION OF ZNSE/GAAS HETEROSTRUCTURE USING TRANSVERSE ACOUSTOELECTRIC VOLTAGE SPECTROSCOPY

被引:10
作者
HAN, KJ
ABBATE, A
BHAT, IB
DAS, P
机构
[1] Rensselaer Polytechnic Institute, Troy
关键词
D O I
10.1063/1.107433
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transverse acoustoelectric voltage (TAV) spectroscopy has been employed to characterize the interface of high-resistivity ZnSe/GaAs heterostructure. Single- and double-beam TAV spectroscopy have been used to study the interface band and impurity transitions of the heterostructure at room temperature. From the TAV spectrum, a conduction band offset of 0.059 eV was found. The spectral behavior of the TAV waveform for single and double-beam cases was different due to the presence of a large number of surface states at the interface. Additional transitions in ZnSe film were also found in the double-beam case when a bias beam of 2.637 eV was used.
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页码:862 / 864
页数:3
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