Electro-optical properties of Er-doped SnO2 thin films

被引:39
作者
Morais, EA
Scalvi, LVA
Geraldo, V
Scalvi, RMF
Ribeiro, SJL
Santilli, CV
Pulcinelli, SH
机构
[1] UNESP, Dept Fis FC, BR-17033360 Bauru, SP, Brazil
[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
[3] UNESP, Inst Quim Araraquara, BR-14801907 Araraquara, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
erbium doping; oxygen adsorption; photoconductivity; tin dioxide films;
D O I
10.1016/S0955-2219(03)00515-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photoconductivity of SnO2 sol-gel films is excited, at low temperature, by using a 266 nm line-fourth harmonic-of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO2, the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1857 / 1860
页数:4
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