Confirmation of metastable neutral DX0 state of Si-related DX center in AlxGa1-xAs by transient photoconductivity

被引：8

作者：

Ghosh, S ^{[1
]}

Kumar, V ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110054,INDIA

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 12期

关键词：

D O I：

10.1016/S0038-1098(97)00320-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoconductivity transients due to the Si-related DX center in AlxGa1-xAs have been studied at low temperature. We have observed a two step photoionization process, which has been analyzed with the negative-U model. Detailed analysis of the photoionization kinetics of Si-DX centers at different temperatures and light intensities establishes the negatively charged ground state (DX-) of the DX center and existence of the metastable neutral (DX0) state. (C) 1997 Published by Elsevier Science Ltd.

引用

页码：781 / 785

页数：5

共 18 条

[1] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[2] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[3] EFFECT OF TRAPS ON LOW-TEMPERATURE HIGH ELECTRON-MOBILITY TRANSISTOR CHARACTERISTICS [J].

CHI, JY ;

HOLMSTROM, RP ;

SALERNO, JP .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :381-384

[4] HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS [J].

COLLINS, DM ;

MARS, DE ;

FISCHER, B ;

KOCOT, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :857-861

[5] DIRECT EVIDENCE FOR 2-STEP PHOTOIONIZATION OF DX(TE) CENTERS IN ALXGA1-XAS [J].

DOBACZEWSKI, L ;

KACZOR, P .

PHYSICAL REVIEW LETTERS, 1991, 66 (01) :68-71

[6] PHOTOIONIZATION OF THE DX(TE) CENTERS IN ALXGA1-XAS - EVIDENCE FOR A NEGATIVE-U CHARACTER OF THE DEFECT [J].

DOBACZEWSKI, L ;

KACZOR, P .

PHYSICAL REVIEW B, 1991, 44 (16) :8621-8632

[7] DIRECT EVIDENCE FOR THE NEGATIVE-U NATURE OF THE DX CENTER IN ALXGA1-XAS [J].

GHOSH, S ;

KUMAR, V .

PHYSICAL REVIEW B, 1992, 46 (12) :7533-7536

[8] A DEEP-LEVEL SPECTROSCOPIC TECHNIQUE FOR DETERMINING CAPTURE CROSS-SECTION ACTIVATION-ENERGY OF SI-RELATED DX CENTERS IN ALXGA1-XAS [J].

GHOSH, S ;

KUMAR, V .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) :8243-8245

[9] ON THE LOW-TEMPERATURE DEGRADATION OF (ALGA)AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KASTALSKY, A ;

KIEHL, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :414-423

[10] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

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