DIRECT EVIDENCE FOR THE NEGATIVE-U NATURE OF THE DX CENTER IN ALXGA1-XAS

被引：14

作者：

GHOSH, S

KUMAR, V

机构：

[1] Department of Physics, Indian Institute of Science

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.46.7533

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoemission-deep-level transient spectroscopy with 1.38-eV light reveals a new level with a thermal activation energy of 0.2 eV for the DX centers in silicon-doped AlxGa1-xAs(x=0.26). The observation of this level directly proves the negative-U properties of DX centers and the existence of a metastable state DX0, which is also confirmed by transient photoconductivity experiments.

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页码：7533 / 7536

页数：4

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