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Uniaxial tensile strain and exciton-phonon coupling in bent ZnO nanowires
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作者:

Chen, Rui
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Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Ye, Quan-Lin
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Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

He, T. C.
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Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Wu, T.
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Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Sun, H. D.
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Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
机构:
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China
关键词:
EMISSION;
GROWTH;
D O I:
10.1063/1.3601479
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We investigate the optical property of bent ZnO nanowires (NWs) obtained by low energy argon ion milling. At room temperature, the bent NWs demonstrates an enhanced near band edge ultraviolet emission, while the deep level green emission is totally suppressed. Temperature dependent photoluminescence measurements were carried out between 10 and 300 K for both the as-grown and the bent ZnO NWs. It is found that the emission peak energy of the bent NWs systematically shifts to lower energy compared to the as-grown NWs in the whole measured temperature range. Our results indicate that the redshift in the emission peak is related to the uniaxial tensile strain and the enhanced exciton-phonon coupling strength in the bent ZnO NWs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601479]
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