Investigation of anomalous inversion C-V characteristics for long-channel MOSFETs with leaky dielectrics:: Mechanisms and reconstruction

被引：2

作者：

Lee, Wei ^{[1
]}

Su, Pin ^{[1
]}

Su, Ke-Wei ^{[2
]}

Chiang, Chung-Shi ^{[2
]}

Liu, Sally ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Taiwan Seminconductor Mfg Co, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2008年 / 21卷 / 01期

关键词：

capacitance-voltage (C-V); intrinsic input resistance; metal-oxide-emiconductor (MOS) capacitance; MOSFET; ultrathin gate oxide; CAPACITANCE EXTRACTION; THICKNESS EXTRACTION; OXIDE THICKNESS;

D O I：

10.1109/TSM.2007.914374

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper investigates anomalous inversion capacitance-voltage (C-V) attenuation for MOSFETs with leaky dielectrics. We propose to reconstruct the inversion C-V characteristic based on long-channel MOSFETs using the concept of intrinsic input resistance (R-ii). The concept of R-ii has been validated by segmented BSIM4/SPICE simulation. Our reconstructed C-V characteristics show poly-depletion effects, which are not visible in the two-frequency three-element method and agree well with the North Carolina State University-CVC simulation results. The intrinsic input resistance dominates the overall gate-current-induced debiasing effect (similar to 95% for L = 20 mu m) and can be extracted directly from the I-V characteristics. Due to its simplicity, our proposed R-ii approach may provide an option for regular process monitoring purposes.

引用

页码：104 / 109

页数：6

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