Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping

被引：32

作者：

Chien, Jui-Fen ^{[1
]}

Chen, Ching-Hsiang ^{[3
]}

Shyue, Jing-Jong ^{[1
,4
]}

Chen, Miin-Jang ^{[1
,2
,5
]}

机构：

[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Ctr Emerging Mat & Adv Devices, Taipei 10617, Taiwan

[3] Protrustech Corp Ltd, Tainan 701, Taiwan

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[5] Natl Nano Device Labs, Hsinchu 30078, Taiwan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2012年 / 4卷 / 07期

关键词：

in situ atomic layer doping; remote plasma; zinc oxide; X-ray absorption near edge spectroscopy; X-ray photoelectron spectroscopy; atomic layer deposition; P-TYPE ZNO; STIMULATED-EMISSION; DEPOSITION; FABRICATION; ADSORPTION; NANORODS; RH(111); DEVICE;

D O I：

10.1021/am300551y

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nitrogen-doped ZnO (ZnO:N) films were prepared by remote plasma in situ atomic layer doping. X-ray photoelectron and absorption near-edge spectroscopies reveal the presence of Zn-N bond and a decrease in strength of the O 2p hybridized with Zn 4s states, which are consistent e. with the decrease of electron concentration in ZnO:N films with increasing nitrogen content and indicate the formation of acceptor states by occupation of oxygen sites with nitrogen. Linear dependence between the nitrogen content and the atomic layer doping percentage indicates the electrical properties and local electronic structures this atomic layer doping technique.

引用

页码：3471 / 3475

页数：5

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