Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties

被引：56

作者：

Lim, S. J. ^{[1
]}

Kim, Jae-Min ^{[2
]}

Kim, Doyoung ^{[2
]}

Kwon, Soonju ^{[1
]}

Park, Jin-Seong ^{[3
]}

Kim, Hyungjun ^{[2
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[3] Dankook Univ, Dept Mat Sci & Engn, Cheonan 330714, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 02期

关键词：

atomic layer deposition; carrier density; II-VI semiconductors; nitrogen; semiconductor doping; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds;

D O I：

10.1149/1.3269973

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrical properties of atomic layer deposition (ALD) nitrogen-doped ZnO (ZnO:N) thin films were investigated as a function of incorporated nitrogen concentration. The nitrogen concentrations in the films were controlled by using different concentrations of NH4OH solution, which was used as a single source for the reactant and nitrogen doping for ALD ZnO:N. The carrier concentrations in ALD ZnO:N decreased down to 6.13x10(13)/cm(3) using 29% NH4OH solution. Thin film transistors (TFTs) were fabricated using ALD ZnO:N thin films with different N contents as active channel layers. The device properties were significantly changed by the amount of nitrogen incorporation due to the change in the electrical properties of ZnO:N films. Especially, threshold voltages were changed from 20.0 to 3.1 V by adjusting nitrogen doping. Additionally, dc bias stability was enhanced by the increment in nitrogen concentration, producing a robust TFT at high nitrogen incorporation. Finally, a high performance flexible TFT was fabricated using ALD ZnO:N as an active layer on poly(ethylene naphthalate) substrate.

引用

页码：H214 / H218

页数：5

共 20 条

[1] High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[2] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[3] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[4] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[5] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[6] Recent progress in transparent oxide semiconductors: Materials and device application [J].

Hosono, Hideo .

THIN SOLID FILMS, 2007, 515 (15) :6000-6014

[7] Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition [J].

Huby, N. ;

Ferrari, S. ;

Guziewicz, E. ;

Godlewski, M. ;

Osinniy, V. .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[8] Improvement of stability in ZnO TFT under bias stress [J].

Hwang, Chi-Sun ;

Park, Sang-Hee Ko ;

Lee, Jeong-IK ;

Chung, Sung Mook ;

Yang, Yong Suk ;

Do, Lee-Mi ;

Chu, Hye Yong .

2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II, 2007, 38 :237-240

[9] Electrically isolated metal-semiconductor field effect transistors and logic circuits on homoepitaxial diamonds [J].

Kawarada, H ;

Itoh, M ;

Hokazono, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (9B) :L1165-L1168

[10] Low-voltage ZnO thin-film transistors with high-K Bi1.5Zn1.0Nb1.5O7 gate insulator for transparent and flexible electronics -: art. no. 043509 [J].

Kim, ID ;

Choi, YW ;

Tuller, HL .

APPLIED PHYSICS LETTERS, 2005, 87 (04)

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