Thermal analysis of AlGaN-GaN power HFETs

被引：46

作者：

Nuttinck, S ^{[1
]}

Wagner, BK

Banerjee, B

Venkataraman, S

Gebara, E

Laskar, J

Harris, HM

机构：

[1] Georgia Inst Technol, Georgia Elect Design Ctr, Atlanta, GA 30332 USA

[2] Georgia Tech Res Inst, Electroopt Environm & Mat Lab, Atlanta, GA 30332 USA

[3] Quellan Inc, Atlanta, GA 30332 USA

[4] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2003年 / 51卷 / 12期

关键词：

AlGaN-GaN heterojunction field-effect transistors; (HFETs); high temperature; microwave; thermal effect; thermal modeling;

D O I：

10.1109/TMTT.2003.819192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a thermal analysis of AlGaN-GaN power heterojunction field-effect transistors (HFETs). We report the dc, small-signal, large-signal, and noise performances of AlGaN-GaN HFETs at high temperatures. The temperature coefficients measured for GaN HFETs are lower than that of GaAs pseudomorphic high electron-mobility transistors, confirming the potential of GaN for high-temperature applications. In addition, the impact of thermal effects on the device dc, small-signal, and large-signal characteristics is quantified using a set of pulsed and continuous wave measurement setups. Finally, a thermal model of a GaN field-effect transistor is implemented to determine design rules to optimize the heat flow and overcome self-heating. Arguments from a device, circuit, and packaging perspective are presented.

引用

页码：2445 / 2452

页数：8

共 15 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures [J].

Chiu, HC ;

Yang, SC ;

Chan, YJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (10) :2210-2215

[3] Undoped AlGaN/GaN HEMTs for microwave power amplification [J].

Eastman, LF ;

Tilak, V ;

Smart, J ;

Green, BM ;

Chumbes, EM ;

Dimitrov, R ;

Kim, H ;

Ambacher, OS ;

Weimann, N ;

Prunty, T ;

Murphy, M ;

Schaff, WJ ;

Shealy, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :479-485

[4] Degradation characteristics of AlGaN/GaN high electron mobility transistors [J].

Kim, H ;

Tilak, V ;

Green, BM ;

Cha, HY ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, :214-218

[5] Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy [J].

Kuball, M ;

Hayes, JM ;

Uren, MJ ;

Martin, T ;

Birbeck, JCH ;

Balmer, RS ;

Hughes, BT .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (01) :7-9

[6] High-temperature electronics - A role for wide bandgap semiconductors? [J].

Neudeck, PG ;

Okojie, RS ;

Chen, LY .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1065-1076

[7] Development of GaN Wide Bandgap Technology for Microwave Power Applications [J].

Nuttinck, S. ;

Gebara, E. ;

Laskar, J. ;

Harris, M. .

IEEE MICROWAVE MAGAZINE, 2002, 3 (01) :80-87

[8] High-frequency noise in AlGaN/GaN HFETs [J].

Nuttinck, S ;

Gebara, E ;

Laskar, J ;

Harris, A .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2003, 13 (04) :149-151

[9] RF performance and thermal analysis of AlGaN/GaN power HEMTs in presence of self-heating effects [J].

Nuttinck, S ;

Gebara, E ;

Laskar, J ;

Wagner, B ;

Harris, M .

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, :921-924

[10] Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaNHEMTs [J].

Nuttinck, S ;

Gebara, E ;

Laskar, J ;

Harris, HM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (12) :2413-2420

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