Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells

被引：18

作者：

Lo, I ^{[1
]}

Hsieh, KY

Hwang, SL

Tu, LW

Mitchel, WC

Saxler, AW

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Inst Mat Sci, Kaohsiung 80424, Taiwan

[3] USAF, Mat Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期

关键词：

D O I：

10.1063/1.123789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells has been studied by using transmission electron microscopy (TEM) and van der Pauw Hall effect measurements. From the cross-sectional TEM imaging, we observed the threading dislocations which "screw'' through the multiple In0.24Ga0.76N/GaN quantum well. From the Hall effect measurement, we found that the Hall mobility decreases as the temperature decreases (mu similar to T-3/2) due to the threading dislocation scattering, and the Hall carrier concentration shows a transition from conduction-band transport to localized-state-hopping transport. The thermal activation energy of the residual donor level (probably Si! is about 20.2 meV. (C) 1999 American Institute of Physics. [S0003-6951(99)02415-8].

引用

页码：2167 / 2169

页数：3

共 25 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].

ABRAM, RA ;

REES, GJ ;

WILSON, BLH .

ADVANCES IN PHYSICS, 1978, 27 (06) :799-892

[2] High transconductance heterostructure field-effect transistors based on AlGaN/GaN [J].

Chen, Q ;

Khan, MA ;

Yang, JW ;

Sun, CJ ;

Shur, MS ;

Park, H .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :794-796

[3] THE INFLUENCE OF OXYGEN ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF GAN CRYSTALS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

CHUNG, BC ;

GERSHENZON, M .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :651-659

[4]

FEHRER M, 1997, P 2 INT C NITR SEM T, P394

[5] THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES [J].

GASKILL, DK ;

WICKENDEN, AE ;

DOVERSPIKE, K ;

TADAYON, B ;

ROWLAND, LB .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) :1525-1530

[6]

Gotz W, 1996, APPL PHYS LETT, V68, P3144, DOI 10.1063/1.115805

[7] Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition [J].

Hansen, PJ ;

Strausser, YE ;

Erickson, AN ;

Tarsa, EJ ;

Kozodoy, P ;

Brazel, EG ;

Ibbetson, JP ;

Mishra, U ;

Narayanamurti, V ;

DenBaars, SP ;

Speck, JS .

APPLIED PHYSICS LETTERS, 1998, 72 (18) :2247-2249

[8] STRUCTURAL EVOLUTION IN EPITAXIAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN FILMS ON SAPPHIRE [J].

KAPOLNEK, D ;

WU, XH ;

HEYING, B ;

KELLER, S ;

KELLER, BP ;

MISHRA, UK ;

DENBAARS, SP ;

SPECK, JS .

APPLIED PHYSICS LETTERS, 1995, 67 (11) :1541-1543

[9] VIOLET-BLUE GAN HOMOJUNCTION LIGHT-EMITTING-DIODES WITH RAPID THERMAL ANNEALED P-TYPE LAYERS [J].

KHAN, MA ;

CHEN, Q ;

SKOGMAN, RA ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1995, 66 (16) :2046-2047

[10] EXPERIMENTAL AND THEORETICAL-STUDIES OF THE 2DEG MOBILITY IN MODULATION-DOPED GAAS/AL(1-X)GAXAS HETEROSTRUCTURES [J].

LIN, BJF ;

TSUI, DC .

SURFACE SCIENCE, 1986, 174 (1-3) :397-398

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