In situ doping of graphene by exfoliation in a nitrogen ambient

被引：26

作者：

Brenner, Kevin ^{[1
]}

Murali, Raghu ^{[1
]}

机构：

[1] Georgia Inst Technol, Nanotechnol Res Ctr, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 11期

基金：

美国国家科学基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; DOPED GRAPHENE; LAYER GRAPHENE; GRAPHITE; GAS; NANORIBBONS; SCATTERING; MOLECULES; DEFECTS; RIBBONS;

D O I：

10.1063/1.3562018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an in situ method of n-doping graphene by exfoliating in an N-ambient. By exfoliating single-layer graphene in a nitrogen-rich environment, the dopant specie plays an active role in minimizing C-C reconstruction that typically occurs at the moment of defect generation. Employing such in situ methods provides an efficient mechanism of passivating defects produced during graphene growth and transfer, as well as a means of controllably incorporating dopant species into the graphene lattice. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562018]

引用

页数：3

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