Modeling of PVT growth of bulk SiC crystals:: general trends and 2" to 4" reactor scaling

被引：4

作者：

Ramm, MS ^{[1
]}

Kulik, AV ^{[1
]}

Zhmakin, IA ^{[1
]}

Karpov, SY ^{[1
]}

Bord, OV ^{[1
]}

Demina, SE ^{[1
]}

Makarov, YN ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, Russian Acad Sci, St Petersburg 194021, Russia

来源：

NEW METHODS, MECHANISMS AND MODELS OF VAPOR DEPOSITION | 2000年 / 616卷

关键词：

D O I：

10.1557/PROC-616-227

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on study of a growth system upscaling from 2 " to 4 " using numerical modeling. The model applied involves heat and mass transfer computations combined with a self-consistent analysis of deposit formation on the reactor walls. General trends in SiC bulk crystal growth originated from upscaling are discussed in detail.

引用

页码：227 / 233

页数：5

共 12 条

[1]

BORD OV, 2000, UNPUB ISSCRM 2000

[2] A transient model for the sublimation growth of silicon carbide single crystals [J].

Bubner, N ;

Klein, O ;

Philip, P ;

Sprekels, J ;

Wilmanski, K .

JOURNAL OF CRYSTAL GROWTH, 1999, 205 (03) :294-304

[3] Modeling analysis of temperature field and species transport inside the system for sublimation growth of SiC in tantalum container [J].

Egorov, YE ;

Galyukov, AO ;

Gurevich, SG ;

Makarov, YN ;

Mokhov, EN ;

Ramm, MG ;

Ramm, MS ;

Roenkov, AD ;

Segal, AS ;

Vodakov, YA ;

Vorob'ev, AN ;

Zhmakin, AI .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :61-64

[4] ON THE SUBLIMATION GROWTH OF SIC BULK CRYSTALS - DEVELOPMENT OF A NUMERICAL PROCESS MODEL [J].

HOFMANN, D ;

HEINZE, M ;

WINNACKER, A ;

DURST, F ;

KADINSKI, L ;

KAUFMANN, P ;

MAKAROV, Y ;

SCHAFER, M .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :214-219

[5] Analysis of sublimation growth of bulk SiC crystals in tantalum container [J].

Karpov, SY ;

Kulik, AV ;

Zhmakin, IA ;

Makarov, YN ;

Mokhov, EN ;

Ramm, MG ;

Ramm, MS ;

Roenkov, AD ;

Vodakov, YA .

JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) :347-351

[6] State of the art in the modelling of SiC sublimation growth [J].

Pons, M ;

Anikin, M ;

Chourou, K ;

Dedulle, JM ;

Madar, R ;

Blanquet, E ;

Pisch, A ;

Bernard, C ;

Grosse, P ;

Faure, C ;

Basset, G ;

Grange, Y .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :18-28

[7] Optimization of sublimation growth of SiC bulk crystals using modeling [J].

Ramm, MS ;

Mokhov, EN ;

Demina, SE ;

Ramm, MG ;

Roenkov, AD ;

Vodakov, YA ;

Segal, AS ;

Vorob'ev, AN ;

Karpov, SY ;

Kulik, AV ;

Makarov, YN .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :107-112

[8] Transport phenomena in sublimation growth of SiC bulk crystals [J].

Segal, AS ;

Vorob'ev, AN ;

Karpov, SY ;

Makarov, YN ;

Mokhov, EN ;

Ramm, MG ;

Ramm, MS ;

Roenkov, AD ;

Vodakov, YA ;

Zhmakin, AI .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :40-43

[9] Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport [J].

Selder, M ;

Kadinski, L ;

Durst, F ;

Straubinger, T ;

Hofmann, D .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :93-97

[10] Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT [J].

Selder, M ;

Kadinski, L ;

Makarov, Y ;

Durst, F ;

Wellmann, P ;

Straubinger, T ;

Hofmann, D ;

Karpov, S ;

Ramm, M .

JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) :333-338

← 1 2 →