High-Yield Production and Transfer of Graphene Flakes Obtained by Anodic Bonding

被引：38

作者：

Moldt, Thomas ^{[1
]}

Eckmann, Axel ^{[2
,3
]}

Klar, Philipp ^{[1
]}

Morozov, Sergey V. ^{[4
]}

Zhukov, Alexander A. ^{[5
]}

Novoselov, Kostya S. ^{[6
]}

Casiraghi, Cinzia ^{[1
,2
,3
]}

机构：

[1] Free Univ Berlin, Dept Phys, D-1000 Berlin, Germany

[2] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England

[3] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England

[4] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[5] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[6] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

来源：

ACS NANO | 2011年 / 5卷 / 10期

关键词：

graphene; transfer; anodic bonding; Raman spectroscopy; LARGE-AREA; HIGH-QUALITY; FILMS; GRAPHITE; DEVICE; EXFOLIATION; SCATTERING; TRANSPORT; ELECTRON; PHASE;

D O I：

10.1021/nn202293f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report large-yield production of graphene flakes on glass by anodic bonding. Under optimum conditions, we counted several tens of flakes with lateral size around 20-30 mu m and a few tens of flakes with larger size. About 60-70% of the flakes have a negligible D peak. We show that it is possible to easily transfer the flakes by the wedging technique. The transfer on silicon does not damage graphene and lowers the doping. The charge mobility of the transferred flakes on silicon is on the order of 6000 cm(2)/V s (at a carrier concentration of 10(12) cm(-2)), which is typical for devices prepared on this substrate with exfoliated graphene.

引用

页码：7700 / 7706

页数：7

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