ZnO thin films and light-emitting diodes

被引：192

作者：

Hwang, Dae-Kue ^{[1
]}

Oh, Min-Suk ^{[1
]}

Lim, Jae-Hong ^{[1
]}

Park, Seong-Ju ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 22期

关键词：

D O I：

10.1088/0022-3727/40/22/R01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO is attracting considerable attention for its possible application to light-emitting sources due to its advantages over GaN. We review the recent progress in the growth of ZnO epitaxial films, doping control, device fabrication processes including etching and ohmic contact formation, and finally the prospects for fabrication and characteristics of ZnO light-emitting diodes.

引用

收藏

页码：R387 / R412

页数：26

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