Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

被引：471

作者：

Mueller, J. ^{[1
]}

Boescke, T. S.

Braeuhaus, D. ^{[2
]}

Schroeder, U. ^{[3
]}

Boettger, U. ^{[2
]}

Sundqvist, J. ^{[1
]}

Kuecher, P. ^{[1
]}

Mikolajick, T. ^{[3
,4
]}

Frey, L. ^{[5
]}

机构：

[1] Fraunhofer Ctr Nanoelect Technol CNT, D-01099 Dresden, Germany

[2] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52074 Aachen, Germany

[3] Namlab gGmbH, D-01187 Dresden, Germany

[4] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

[5] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 11期

关键词：

CAPACITORS;

D O I：

10.1063/1.3636417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remnant polarization of 16 mu C/cm(2) and a high coercive field of 1 MV/cm were observed. Further proof for the ferroelectric nature was collected by quasi-static polarization-voltage hysteresis, small signal capacitance-voltage, and piezoelectric measurements. Data retention characteristics were evaluated by a Positive Up Negative Down pulse technique. No significant decay of the initial polarization state was observed within a measurement range of up to two days. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3636417]

引用

页数：3

共 14 条

[1]

Berthelot A, 2006, PROC EUR S-STATE DEV, P343

[2] Increasing permittivity in HfZrO thin films by surface manipulation [J].

Boescke, T. S. ;

Hung, P. Y. ;

Kirsch, P. D. ;

Quevedo-Lopez, M. A. ;

Ramirez-Bon, R. .

APPLIED PHYSICS LETTERS, 2009, 95 (05)

[3] Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films [J].

Bolten, D ;

Lohse, O ;

Grossmann, M ;

Waser, R .

FERROELECTRICS, 1999, 221 (1-4) :251-257

[4]

BOSCKE TS, APPL PHYS L IN PRESS

[5] Hafnium zirconate gate dielectric for advanced gate stack applications [J].

Hegde, R. I. ;

Triyoso, D. H. ;

Samavedam, S. B. ;

White, B. E., Jr. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)

[6] Integration of lead zirconium titanate thin films for high density ferroelectric random access memory [J].

Kim, Kinam ;

Lee, Sungyung .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)

[7] Why is nonvolatile ferroelectric memory field-effect transistor still elusive? [J].

Ma, TP ;

Han, JP .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (07) :386-388

[8] FeRAM technology for high density applications [J].

Mikolajick, T ;

Dehm, C ;

Hartner, W ;

Kasko, I ;

Kastner, MJ ;

Nagel, N ;

Moert, M ;

Mazure, C .

MICROELECTRONICS RELIABILITY, 2001, 41 (07) :947-950

[9] Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition [J].

Mueller, J. ;

Boescke, T. S. ;

Schroeder, U. ;

Reinicke, M. ;

Oberbeck, L. ;

Zhou, D. ;

Weinreich, W. ;

Kuecher, P. ;

Lemberger, M. ;

Frey, L. .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1818-1821

[10] Ferroelectric-like hysteresis loop in nonferroelectric systems [J].

Pintilie, L ;

Alexe, M .

APPLIED PHYSICS LETTERS, 2005, 87 (11)

← 1 2 →