Highly efficient electron emission from diode-type plane emitters using chemical-vapor-deposited single-crystalline diamond

被引：39

作者：

Ito, T ^{[1
]}

Nishimura, M ^{[1
]}

Hatta, A ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 25期

关键词：

D O I：

10.1063/1.122879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A highly efficient electron emitting diode with a flat emission surface has been fabricated using a 600 nm single-crystalline diamond film homoepitaxially grown on high-pressure synthesized (100) diamond by means of chemical-vapor deposition and ion-implantation techniques. The emitter contains a buried injection electrode layer and a hydrogenated diamond surface. When driving voltages ranging from 0.3 to 1.1 kV were applied between them, very efficient electron emissions were observed. The emission efficiency, defined as the ratio of the emission current to the injection diode current, reached 100% for emission currents on the order of 10(-7) A and did not significantly depend on the currents. (C) 1998 American Institute of Physics. [S0003-6951(98)03051-4].

引用

页码：3739 / 3741

页数：3

共 15 条

[1] DIAMOND JUNCTION COLD-CATHODE [J].