Vertical low-voltage oxide transistors gated by microporous SiO2/LiCl composite solid electrolyte with enhanced electric-double-layer capacitance

被引：13

作者：

Jiang, Jie ^{[1
,2
]}

Sun, Jia ^{[2
]}

Zhou, Bin ^{[2
]}

Lu, Aixia ^{[2
]}

Wan, Qing ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China

[2] Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期

基金：

中国国家自然科学基金; 中国科学院院长基金特别;

关键词：

D O I：

10.1063/1.3477949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical low-voltage indium-tin oxide field-effect transistors (FETs) gated by microporous SiO2-based solid electrolyte are fabricated at room temperature. Our results indicate that Li ions can enhance the electric-double-layer capacitance of the microporous SiO2 solid electrolyte and reduce the operation voltage of the vertical FETs from 1.5 to 0.8 V. Such vertical low-voltage FETs exhibited a good performance with a high current output (similar to 1.0 A/cm(2)), a low subthreshold swing (< 80 mV/decade), and a large on-off ratio (> 10(6)), respectively. An operation mechanism which provides a better insight into the oxide-based vertical FETs is discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3477949]

引用

页数：3

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