Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

被引：121

作者：

Reddy, N. Koteeswara ^{[1
]}

Ahsanulhaq, Q. ^{[1
]}

Kim, J. H. ^{[1
]}

Hahn, Y. B. ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2839579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work explores the temperature dependent heterojunction behavior of n-type zinc oxide (ZnO) nanorods/ZnO/p-Si diodes. The as-grown ZnO nanorod structures on ZnO coated p-Si substrates are single crystalline and grown along the [001] direction. The p-n diode showed an excellent stability over the temperature range of 20-150 degrees C due to highly doped p-type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from 0.42 to 0.67 mu A. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported. (C) 2008 American Institute of Physics.

引用

页数：3

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