A simple route to Ohmic contacts on low boron-doped CVD diamond

被引：7

作者：

Alexander, MS ^{[1
]}

Latto, MN ^{[1
]}

May, PW ^{[1
]}

Riley, DJ ^{[1
]}

Pastor-Moreno, G ^{[1
]}

机构：

[1] Univ Bristol, Sch Chem, Bristol BS8 1TS, Avon, England

来源：

基金：

英国工程与自然科学研究理事会;

关键词：

CVD diamond; boron-doping; Ohmic contact; annealing;

D O I：

10.1016/S0925-9635(03)00174-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation and characterisation of titanium underlayer contacts (TiUL) for polycrystalline diamond grown on silicon substrates are described. The TiUL contacts are advantageous that they are easy to fabricate and permit direct probing of the electronic and electrochemical properties of the as-grown polycrystalline diamond surface. The TiUL contacts show nearly Ohmic behaviour over a wide potential range. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：1460 / 1462

页数：3

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