Metalorganic vapor phase epitaxial growth of high-quality AlInN/AlGaN multiple layers on GaN

Al1-x In-x N epilayers with a thickness of 20 nm grown on GaN were characterized. It was found that the surface roughness of very thin Al1-x In-x N is more sensitive to the growth temperature than to the lattice mismatch to GaN. Multiple layers of (Al0.95In0.05N/Al0.10Ga0.90N)(5) were grown at different temperatures. X-ray diffraction measurement revealed that the sample grown at 800 degreesC is of high quality, showing up to five orders of sharp satellite peaks. while no clear satellite peaks are observed from the sample grown at 720 degreesC. Transmission electron microscopy observation revealed that multiple layers grown at 800 degreesC exhibit very sharp interfaces.