Cross-sections, rate constants and transport coefficients in silane plasma chemistry

被引:294
作者
Perrin, J [1 ]
Leroy, O [1 ]
Bordage, MC [1 ]
机构
[1] UNIV TOULOUSE 3, CPAT, CNRS URA 277, F-31062 TOULOUSE, FRANCE
关键词
CHEMICAL-VAPOR-DEPOSITION; HYDROGENATED AMORPHOUS-SILICON; ABSOLUTE RATE CONSTANTS; SEQUENTIAL CLUSTERING REACTIONS; ELECTRON-IMPACT DISSOCIATION; MONTE-CARLO SIMULATION; ION-MOLECULE REACTIONS; TRANSLATIONAL ENERGY-DISTRIBUTION; RF-GLOW-DISCHARGES; NEGATIVE-IONS;
D O I
10.1002/ctpp.2150360102
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
This paper presents a critical review of the basic data concerning the physics and chemistry of low pressure SiH4 glow discharges used to deposit hydrogenated amorphous silicon films (a-Si:H), Start ing with an updated table of thermochemical data, we analyze the gas-phase elementary processes consisting of i) electron-molecule collisions, ii) ion-molecule collisions, iii) neutral-neutral collisions, iv) other electron and ion collisions involving electron-ion and ion-ion recombination, electron attachment on radicals and detachment of anions, and v) cluster growth kinetics in dusty plasmas. Experimental data or theoretical estimates are given and discussed in tcr rns of cross-sections, collision and reaction rate constants, and transport coefficients. We also analyze the surface processes and reaction probabilities of ions! radicals and molecules.
引用
收藏
页码:3 / 49
页数:47
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