Cross-gain modulation in inhomogeneously broadened gain spectra of InP-Based 1550 nm quantum dash optical amplifiers: Small-signal bandwidth dependence on wavelength detuning

被引:32
作者
Alizon, R [1 ]
Bilenca, A
Dery, H
Mikhelashvili, V
Eisenstein, G
Schwertberger, R
Gold, D
Reithmaier, JP
Forchel, A
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
关键词
D O I
10.1063/1.1588372
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dynamical properties of cross-gain modulation (XGM) within the inhomogeneously broadened gain spectrum of an InP quantum dash optical amplifier operating at 1550 nm are examined. The small-signal XGM modulation bandwidth increases with the carrier escape time, which is achieved at long probe wavelengths. The nature of the XGM dynamics is confirmed by spectrally resolved optical modulation response measurements in quantum dash lasers. (C) 2003 American Institute of Physics.
引用
收藏
页码:4660 / 4662
页数:3
相关论文
共 16 条
[1]   Pattern-effect-free semiconductor optical amplifier achieved using quantum dots [J].
Akiyama, T ;
Hatori, N ;
Nakata, Y ;
Ebe, H ;
Sugawara, M .
ELECTRONICS LETTERS, 2002, 38 (19) :1139-1140
[2]   Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices [J].
Akiyama, T ;
Kuwatsuka, H ;
Simoyama, T ;
Nakata, Y ;
Mukai, K ;
Sugawara, M ;
Wada, O ;
Ishikawa, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (08) :1059-1065
[3]  
[Anonymous], 1999, SEMICONDUCTORS SEMIM
[4]   Broad-band wavelength conversion based on cross-gain modulation and four-wave mixing in InAs-InP quantum-dash semiconductor optical amplifiers operating at 1550 nm [J].
Bilenca, A ;
Alizon, R ;
Mikhelashhvili, V ;
Dahan, D ;
Eisenstein, G ;
Schwertberger, R ;
Gold, D ;
Reithmaier, JP ;
Forchel, A .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (04) :563-565
[5]   InAs/InP 1550 nm quantum dash semiconductor optical amplifiers [J].
Bilenca, A ;
Alizon, R ;
Mikhelashvili, V ;
Eisenstein, G ;
Schwertberger, R ;
Gold, D ;
Reithmaier, JP ;
Forchel, A .
ELECTRONICS LETTERS, 2002, 38 (22) :1350-1351
[6]   Quantum dimensionality, entropy, and the modulation response of quantum dot lasers [J].
Deppe, DG ;
Huffaker, DL .
APPLIED PHYSICS LETTERS, 2000, 77 (21) :3325-3327
[7]   Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers [J].
Eliseev, PG ;
Li, H ;
Liu, GT ;
Stintz, A ;
Newell, TC ;
Lester, LF ;
Malloy, KJ .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) :135-142
[8]   Temperature dependence of dynamic and DC characteristics of quantum-well and quantum-dot lasers: A comparative study [J].
Klotzkin, D ;
Bhattacharya, P .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1999, 17 (09) :1634-1642
[9]   Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers [J].
Matthews, DR ;
Summers, HD ;
Smowton, PM ;
Hopkinson, M .
APPLIED PHYSICS LETTERS, 2002, 81 (26) :4904-4906
[10]   Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation [J].
Maximov, MV ;
Asryan, LV ;
Shernyakov, YM ;
Tsatsul'nikov, AF ;
Kaiander, IN ;
Nikolaev, VV ;
Kovsh, AR ;
Mikhrin, SS ;
Ustinov, VM ;
Zhukov, AE ;
Alferov, ZI ;
Ledenstov, NN ;
Bimberg, D .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (05) :676-683